Energy Gap Analysis of Ba0.25Sr0.75TiO3 Thin Film on Glass Indium Tin Oxide (ITO) Substrate Rony Febryarto (a,b), Novia Fransiska Simbolon(a), Dea Widiawati(a), Naila Nur Alifa(a), Irzaman(a)
a) Department of Physics, Faculty of Mathematics and Natural Sciences, IPB University, Bogor, Indonesia, 16680
b) Electronics Research Center, National Research and Innovation Agency, Bandung, Indonesia, 40135
Abstract
Ba0.25Sr0.75TiO3 thin film on Indium Tin Oxide (ITO) glass substrate has been successfully made by Chemical Solution Deposition (CSD) method with 0.5 M solubility assisted by 3000 rpm spin coating, and annealing at 550 ℃- with temperature speed of 100 ℃-/hour held for 8 hours and decreased temperature. Indium Tin Oxide (ITO) glass substrate with glass thickness of 1.1mm and resistivity of ~20 ohms/sq. This thin film was tested for optical properties using UV-Vis Spectrophotometer with a range of 230-850 nm and resulted in an energy gap of 2.29 eV. Energy gap analysis of Ba0.25Sr0.75TiO3 thin film on glass Indium Tin Oxide (ITO) substrate is very important because this film is the forerunner of light sensor.
Keywords: Ba0.25Sr0.75TiO3, Energy Gap, light sensor,
