Effect of Annealing Techniques on the Thermoelectric Properties of Molybdenum Disulfide Thin Films Prepared by RF Sputtering Irasani Rahayu1, Mekhala Insawang2,3, Athorn Vora-ud2,3 , Tosawat Seetawan2,3, Iim Fatimah1, Yono Hadi Pramono1, Melania Suweni Muntini1*
1 Instrumentation and Electronic Laboratory, Department of Physics, Institute Teknologi Sepuluh Nopember, Surabaya, 60111, Indonesia
2Program of Physics, Faculty of Science and Technology, Sakon Nakhon Rajabhat University, 680 Nittayo Road, Mueang District, Sakon Nakhon, 47000, Thailand
3Center of Excellence on Alternative Energy, Research and Development Institute, Sakon Nakhon Rajabhat University, 680 Nittayo Road, Mueang District, Sakon Nakhon, 47000, Thailand
Abstract
Innovation in renewable energy, such as thermoelectric technology, is key to meeting the growing energy demand without harming the environment. The use of thermoelectric materials in renewable energy systems enables the direct conversion of heat into electricity, thereby enhancing energy efficiency and sustainability. Molybdenum disulfide, a transition metal dichalcogenide, shows great potential for applications in thermoelectric devices. The advancement of 2D material fabrication technologies supports the development of materials suitable for thermoelectric applications. One possible method is Physical Vapor Deposition (PVD), which can be implemented using the sputtering technique. Heat treatment of thin-film materials affects their structural, electronic, and thermoelectric properties. One effective approach for this treatment is annealing using a furnace. The MoS2 material is deposited using the Radio Frequency Sputtering under base pressure conditions below 2.2x10-3 Pa and a working pressure of 1.3 Pa. The deposition of MoS2 thin films was performed at room temperature with an argon gas flow of 53.5 sccm. The MoS2 thin films were deposited using the RF Sputtering method with a deposition time of approximately 30 minutes and a fixed power of 200 watts. After deposition, the MoS2 thin films underwent heat treatment using Quartz Tube Furnace before testing. Based on the test results, the thermoelectric characteristics were determined, including the resistivity and Seebeck coefficient . The resistivity of the MoS2 thin film was lowest when heated to 600 C, measuring 1.82 x 10-3 Ohm m at 50 C. The resistivity is inversely proportional to the measurement temperature on the ZEM3 machine. The Seebeck coefficient has a negative value, indicating that the MoS2 thin film contains charge carriers, with a value of -3.54 x 10-4 V/K at 50 C. Based on the resistivity and Seebeck coefficient values, the power factor was calculated as 1.29 x10-4 W/mK2 at 50 C.
