Synthesis and Characterization of \(FASnI_{3}\) and \(CsSnI_{3}\) as Active Layers in Perovskite Solar Cells
Rossyaila Matsna Muslimawati \(^{(a)}\), Natalita Maulani Nursam \(^{(b*)}\), Widhya Budiawan \(^{(b)}\), Muhammad Haris Mahyuddin \(^{(c,d*)}\) and Ahmad Nuruddin \(^{(c,d*)}\)

a) Doctoral Program of Engineering Physics, Faculty of Industrial Technology, Institut Teknologi Bandung, Jl. Ganesha No. 10, Bandung 40132, Indonesia
b) Research Center for Electronics, National Research and Innovation Agency, Bandung, 40132, Indonesia
c) Quantum and Nano Technology Research Group, Faculty of Industrial Technology, Institut Teknologi Bandung, Jl. Ganesha No. 10, Bandung 41032, Indonesia
d) Research Center for Nanosciences and Nanotechnology (RCNN), Institut Teknologi Bandung, Jl. Ganesha No. 10, Bandung 41032, Indonesia


Abstract

Tin-based perovskites have gained significant attention as promising lead-free perovskite solar cells (PSCs) due to environmental concerns. Among tin-based perovskites, formamidinium tin triiodide (\(FASnI_{3}\)) and cesium tin triiodide (\(CsSnI_{3}\)) exhibit strong potential for efficient solar energy harvesting, owing to their favorable optoelectronic properties. This study investigates the synthesis and characterization of \(FASnI_{3}\) and \(CsSnI_{3}\) perovskites using a one-step precursor deposition method. X-ray diffraction (XRD) analysis confirms the orthorhombic phase of \(FASnI_{3}\), while \(CsSnI_{3}\) exhibits peaks corresponding to \(SnI_{2}\) and \(Cs_{2}SnI_{6}\). Optical characterization reveals bandgaps of 1.42 and 1.28 eV for \(FASnI_{3}\) and \(CsSnI_{3}\), respectively, with the \(CsSnI_{3}\) demonstrating extended absorption toward longer wavelengths. The photovoltaic performance of Sn-based PSCs with an architecture of ITO/PEDOT:PSS/perovskite/\(C_{60}\)/Ag was simulated using the SCAPS-1D code. The \(FASnI_{3}\)-based device achieved a power conversion efficiency (PCE) of 19.2% (\(V_{OC}\) = 0.95 V, \(J_{SC}\) = 28.27 mA/\(cm^{2}\), FF = 71.04%), while the \(CsSnI_{3}\)-based cell showed a PCE of 18.64% \(V_{OC}\) = 0.77 V, \(J_{SC}\) = 31.38 mA/\(cm^{2}\), FF = 77%). These findings highlight the potential of Sn-based perovskites for high-performance, eco-friendly photovoltaic devices.

Keywords: Tin-based perovskite, \(FASnI_{3}\), \(CsSnI_{3}\), bandgap, crystal structure, SCAPS-1D.

Topic: Energy and Environmental Physics

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